Comparison of ZnO-Based JFET, MESFET, and MISFET-Reference-Cited by-同舟云学术

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Comparison of ZnO-Based JFET, MESFET, and MISFET

Published:2013-06 Issue:6 Volume:60 Page:1828-1833
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Klupfel Fabian Johannes,Schein Friedrich-Leonhard,Lorenz Michael,Frenzel Heiko,von Wenckstern Holger,Grundmann Marius

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/6516920/06515349.pdf?arnumber=6515349

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3. Performance of metal-semiconductor field effect transistors on mist chemical-vapor-deposition grown ZnO channels with intentionally oxidized AgOx Schottky contact gates;Journal of Applied Physics;2021-11-07

4. All‐Oxide Transparent Thin‐Film Transistors Based on Amorphous Zinc Tin Oxide Fabricated at Room Temperature: Approaching the Thermodynamic Limit of the Subthreshold Swing;Advanced Electronic Materials;2020-09-11

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