Study of interplay between magnetic/electric fields and Cr-doped effect in Mo1-xCrxSe2 (x=0, 0.5) nanosheet-Reference-Cited by-同舟云学术

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Study of interplay between magnetic/electric fields and Cr-doped effect in Mo_1-xCr_xSe₂ (x=0, 0.5) nanosheet

Published:2023-05 Issue: Volume: Page:
ISSN:
Container-title:2023 IEEE International Magnetic Conference - Short Papers (INTERMAG Short Papers)
language:
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Author:

Lee Yu-Ting¹,Tsai Tung-Chi¹,Yang Chun-Chuen²,Tung Yung-Hsiang³,Lin Kuen-Song⁴

Affiliation:

1. Chung Yuan Christian University,Department of Physics,Chung Li,Taiwan,32023

2. National Central University,Department of Physics,Taoyuan,Taiwan,320317

3. National Sun Yat-sen University,Department of Physics,Kaohsiung,Taiwan,80424

4. Yuan Ze University,Department of Chemical Engineering and Material Science,Taoyuan,Taiwan,32003

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10228191/10228192/10228439.pdf?arnumber=10228439

Reference8 articles.

1. High-Mobility Transistors Based on Large-Area and Highly Crystalline CVD-Grown MoSe2 Films on Insulating Substrates

2. MoSe2/ZrSe2 van der Waals Heterostructure Tunneling Field Effect Transistor with Substitutional Doped Source;zhang;J Appl Phys,2019

3. Ni3Se4@MoSe2 Composites for Hydrogen Evolution Reaction

4. MoSe2-GO/rGO Composite Catalyst for Hydrogen Evolution Reaction

5. First principle defect study of MoSe2 field effect transistor

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