Band engineering of magnetic semiconductors by phosphorus doping-Reference-Cited by-同舟云学术

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Band engineering of magnetic semiconductors by phosphorus doping

Published:2023-05 Issue: Volume: Page:
ISSN:
Container-title:2023 IEEE International Magnetic Conference - Short Papers (INTERMAG Short Papers)
language:
Short-container-title:

Author:

Yastrubchak Oksana¹,Riney Logan²,Powers William²,Tataryn Nataliia¹,Mamykin Sergii¹,Kondratenko Olga¹,Romanyuk Volodymyr¹,Borkovska Lyudmyla¹,Kolomys Oleksanr¹,Khomenkova Larysa¹,Wang Jiashu²,Liu Xinyu²,Furdyna Jacek K.²,Assaf Badih A.²,Fedchenko Olena³,Vasilyev Dmitry³,Babenkov Sergey³,Elmers Hans-Joachim³,Medjanik Katerina³,Schönhense Gerd³

Affiliation:

1. National Academy of Sciences of Ukraine,V. E. Lashkaryov Institute of Semiconductor Physics,Kyiv,Ukraine,U-03028

2. University of Notre Dame,Department of Physics and Astronomy,Notre Dame,IN,USA,46556

3. Johannes Gutenberg-Universität,Institut für Physik,Mainz,Germany,D-55128

Funder

National Academy of Sciences

Science and Technology Center in Ukraine

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10228191/10228192/10228286.pdf?arnumber=10228286

Reference9 articles.

1. Model dielectric constants of GaP, GaAs, GaSb, InP, InAs, and InSb

2. Carrier localization in quaternary Ga1−xMnxAs1−yPy ferromagnetic semiconductor films

3. Spectroscopic Ellipsometry

4. Effect of low-temperature annealing on the electronic- and band-structures of (Ga,Mn)As epitaxial layers

5. Ferromagnetism and the electronic band structure in (Ga,Mn)(Bi,As) epitaxial layers

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