Ferromagnetism and the electronic band structure in (Ga,Mn)(Bi,As) epitaxial layers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4893381
Reference29 articles.
1. The electronic band structure of GaBiAs/GaAs layers: Influence of strain and band anti-crossing
2. Valence-band anticrossing in mismatched III-V semiconductor alloys
3. Spin-dependent phenomena in ferromagnetic/nonmagnetic III–V heterostructures
4. Battle of the bands
5. Dilute ferromagnetic semiconductors: Physics and spintronic structures
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1. Band Engineering of Magnetic (Ga,Mn)As Semiconductors by Phosphorus Doping;IEEE Transactions on Magnetics;2023-11
2. Valence Band Dispersion in Bi-Doped (Ga,Mn)As Epitaxial Layers;IEEE Transactions on Magnetics;2023-11
3. Influence of Bi doping on the electronic structure of (Ga,Mn)As epitaxial layers;Scientific Reports;2023-10-12
4. Investigation of Valence Band Dispersion in (Ga, Mn)(Bi, As) Epitaxial Nanolayers;2023 IEEE 13th International Conference Nanomaterials: Applications & Properties (NAP);2023-09-10
5. Modification of Magnetic Semiconductors by Phosphorus Doping;2023 IEEE 13th International Conference Nanomaterials: Applications & Properties (NAP);2023-09-10
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