Enhancement of Voltage-Controlled Magnetic Anisotropy in Orthogonally-Magnetized CoFeB/MgO/CoFeB-Reference-Cited by-同舟云学术

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Enhancement of Voltage-Controlled Magnetic Anisotropy in Orthogonally-Magnetized CoFeB/MgO/CoFeB

Published:2024-05-05 Issue: Volume: Page:1-2
ISSN:
Container-title:2024 IEEE International Magnetic Conference - Short papers (INTERMAG Short papers)
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Author:

Huang Puyang¹,Chen Aitian²,Cai Xinyu³,Wu Di⁴,Zhang Xi-Xiang²,Kou Xufeng¹

Affiliation:

1. School of Information Science and Technology, ShanghaiTech University,Shanghai,China,201210

2. King Abdullah University of Science and Technology,Physical Science and Engineering Division,Thuwal,Saudi Arabia,23955-6900

3. ShanghaiTech University,ShanghaiTech Laboratory for Topological Physics,Shanghai,China,201210

4. Suzhou Inston Technology Co., Ltd.,Suzhou,China,215121

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx8/10576737/10576738/10576853.pdf?arnumber=10576853

Reference9 articles.

1. Resistive switching materials for information processing

2. First demonstration of field-free perpendicular SOT-MRAM for ultrafast and high-density embedded memories

3. Failure and reliability analysis of STT-MRAM

4. Ultra-low switching energy and scaling in electric-field-controlled nanoscale magnetic tunnel junctions with high resistance-area product

5. Thermally stable voltage-controlled perpendicular magnetic anisotropy in Mo|CoFeB|MgO structures

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