GaN-HEMT dynamic ON-state resistance characterisation and modelling-Reference-Cited by-同舟云学术

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GaN-HEMT dynamic ON-state resistance characterisation and modelling

Published:2016-06 Issue: Volume: Page:
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Container-title:2016 IEEE 17th Workshop on Control and Modeling for Power Electronics (COMPEL)
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Author:

Li Ke,Evans Paul,Johnson Mark

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/7547486/7556653/07556732.pdf?arnumber=7556732

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Wireless Power Transfer: A Paradigm Shift for the Next Generation;IEEE Journal of Emerging and Selected Topics in Power Electronics;2023-06

2. Investigation of Current Collapse Mechanism on AlGaN/GaN Power Diodes;Electronics;2023-04-26

3. Effect of Dynamic Threshold-Voltage Instability on Dynamic ON-State Resistance in SiC MOSFETs;IEEE Transactions on Electron Devices;2022-10

4. Evaluation and Comparison of Dynamic ON-state Resistance Measurement Methods for GaN Devices;2022 International Power Electronics Conference (IPEC-Himeji 2022- ECCE Asia);2022-05-15

5. Measuring of Dynamic On-State Resistance of GaN-HEMTs in Half-Bridge Application under Hard and Soft Switching Operation;2019 IEEE Electrical Power and Energy Conference (EPEC);2019-10

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