A ReRAM-based non-volatile flip-flop with sub-V<inf>T</inf> read and CMOS voltage-compatible write-Reference-Cited by-同舟云学术

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A ReRAM-based non-volatile flip-flop with sub-VT read and CMOS voltage-compatible write

Published:2013-06 Issue: Volume: Page:
ISSN:
Container-title:2013 IEEE 11th International New Circuits and Systems Conference (NEWCAS)
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Author:

Kazi Ibrahim,Meinerzhagen Pascal,Gaillardon Pierre-Emmanuel,Sacchetto Davide,Burg Andreas,De Micheli Giovanni

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/6568396/6573561/06573586.pdf?arnumber=6573586

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Low-power and area-efficient memristor based non-volatile D latch and flip-flop: Design and analysis;PLOS ONE;2024-03-07

2. Nonvolatile D- latch and flip-flop Designs based on new Memristor Technology;2023 Eighth International Conference on Science Technology Engineering and Mathematics (ICONSTEM);2023-04-06

3. A ReRAM-based Nonvolatile FPGA;2022 IEEE 20th Student Conference on Research and Development (SCOReD);2022-11-08

4. A radiation-hardened hybrid RRAM-based non-volatile latch;Semiconductor Science and Technology;2021-07-30

5. An optimization of a non-volatile latch using memristors for sequential circuit applications;Analog Integrated Circuits and Signal Processing;2021-05-18

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