Performance of In/sub 0.53/Ga/sub 0.47/As and InP junction field-effect transistors for optoelectronic integrated circuits. I. Device analysis-Reference-Cited by-同舟云学术

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Performance of In/sub 0.53/Ga/sub 0.47/As and InP junction field-effect transistors for optoelectronic integrated circuits. I. Device analysis

Published:1989-06 Issue:6 Volume:7 Page:957-965
ISSN:0733-8724
Container-title:Journal of Lightwave Technology
language:
Short-container-title:J. Lightwave Technol.

Author:

Lo D.C.W.,Forrest S.R.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Atomic and Molecular Physics, and Optics

Link

http://xplorestaging.ieee.org/ielx1/50/1403/00032364.pdf?arnumber=32364

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Simulation of InP-based monolithically integrated PIN-HEMT front-end optical receiver;SPIE Proceedings;2005-01-31

2. A monolithically integrated InGaAs-InP p-i-n/JFET focal plane array;IEEE Photonics Technology Letters;1996-04

3. Design considerations for wide-band p-i-n/HBT monolithic transimpedance optical receivers;Journal of Lightwave Technology;1993

4. Gate tunneling current in In0.53Ga0.47As junction field‐effect transistors;Applied Physics Letters;1992-03-30

5. Optically powered arrays for optoelectronic interconnection networks;Applied Optics;1991-04-10

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