Design considerations for wide-band p-i-n/HBT monolithic transimpedance optical receivers
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Atomic and Molecular Physics, and Optics
Link
http://xplorestaging.ieee.org/ielx1/50/5549/00212549.pdf?arnumber=212549
Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
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2. A monolithic GaAs-based short wavelength smart pixel based on fabricated p–i–n PD, a DHBT and a VCSEL;Smart Materials and Structures;2006-10-10
3. Fabrication and characterization of a monolithic InP-based long wavelength smart pixel;Smart Materials and Structures;2005-07-14
4. Simulation studies of a 2 Gb s 1monolithic integrated smart pixel based on fabricated p-i-n PD, DHBT and a VCSEL;Semiconductor Science and Technology;2003-06-11
5. Scaling optoelectronic-VLSI circuits into the 21st century: a technology roadmap;IEEE Journal of Selected Topics in Quantum Electronics;1996-04
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