Impact of Irradiation Side on Neutron-Induced Single-Event Upsets in 65-nm Bulk SRAMs-Reference-Cited by-同舟云学术

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Impact of Irradiation Side on Neutron-Induced Single-Event Upsets in 65-nm Bulk SRAMs

Published:2019-07 Issue:7 Volume:66 Page:1374-1380
ISSN:0018-9499
Container-title:IEEE Transactions on Nuclear Science
language:
Short-container-title:IEEE Trans. Nucl. Sci.

Author:

Abe Shinichiro^ORCID,Liao Wang^ORCID,Manabe Seiya^ORCID,Sato Tatsuhiko,Hashimoto Masanori^ORCID,Watanabe Yukinobu^ORCID

Funder

Japan Science and Technology Agency

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Nuclear Energy and Engineering,Nuclear and High Energy Physics

Link

http://xplorestaging.ieee.org/ielx7/23/8764684/08654696.pdf?arnumber=8654696

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Response of commercial Si-IGBT to neutrons and direction dependency;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2024-07

2. Impact of Irradiation Side on Muon-Induced Single-Event Upsets in 65-nm Bulk SRAMs;IEEE Transactions on Nuclear Science;2024-04

3. A Terrestrial SER Estimation Methodology Based on Simulation Coupled With One-Time Neutron Irradiation Testing;IEEE Transactions on Nuclear Science;2023-08

4. Soft errors in semiconductor devices due to environmental radiation;Journal of the Atomic Energy Society of Japan;2023

5. Impact of incident direction on neutron-induced single-bit and multiple-cell upsets in 14 nm FinFET and 65 nm planar SRAMs;Chinese Physics B;2022-11-01

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