A 0.8 μm Nonacell for 108 Megapixels CMOS Image Sensor with FD-Shared Dual Conversion Gain and 18,000e- Full-Well Capacitance-Reference-Cited by-同舟云学术

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A 0.8 μm Nonacell for 108 Megapixels CMOS Image Sensor with FD-Shared Dual Conversion Gain and 18,000e- Full-Well Capacitance

Published:2020-12-12 Issue: Volume: Page:
ISSN:
Container-title:2020 IEEE International Electron Devices Meeting (IEDM)
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Author:

Oh Youngsun,Kim Munhwan,Choi Wonchul,Choi Hana,Jeon Honghyun,Seok Junho,Choi Yujung,Jung Jaejin,Yoo Kwisung,Park Donghyuk,Kim Yitae,Koh Kyung-min,Lee Jesuk,Moon Chang-Rok,Ahn JungChak

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9371868/9371888/09371936.pdf?arnumber=9371936

Cited by 28 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. An Intrascene Wide Dynamic Range CMOS Image Sensor Using Dual-Gain Ramp Generator for Machine Vision Applications;IEEE Transactions on Instrumentation and Measurement;2024

2. A high dynamic range pixel using lateral overflow integration capacitor and adaptive feedback structure in CMOS image sensors;Optoelectronics Letters;2023-12

3. Efficient Unified Demosaicing for Bayer and Non-Bayer Patterned Image Sensors;2023 IEEE/CVF International Conference on Computer Vision (ICCV);2023-10-01

4. TFET-Based Pixel Source Follower of CMOS Image Sensor for Improved Linearity and High Signal-to-Noise Ratio;IEEE Sensors Journal;2023-09-01

5. Thin-film image sensors with a pinned photodiode structure;Nature Electronics;2023-08-14

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