3D RRAMs with Gate-All-Around Stacked Nanosheet Transistors for In-Memory-Computing-Reference-Cited by-同舟云学术

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3D RRAMs with Gate-All-Around Stacked Nanosheet Transistors for In-Memory-Computing

Published:2020-12-12 Issue: Volume: Page:
ISSN:
Container-title:2020 IEEE International Electron Devices Meeting (IEDM)
language:
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Author:

Barraud S.,Ezzadeen M.,Bosch D.,Dubreuil T.,Castellani N.,Meli V.,Hartmann J.M.,Mouhdach M.,Previtali B.,Giraud B.,Noel J. P.,Molas G.,Portal J.M.,Nowak E.,Andrieu F.

Funder

European Research Council

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9371868/9371888/09371982.pdf?arnumber=9371982

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. An energy‐efficient tunable threshold spiking neuron with excitatory and inhibitory function;International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;2024-03

2. Emerging Technologies for Memory-Centric Computing;Design and Applications of Emerging Computer Systems;2024

3. Monolithic 3D integration of 2D transistors and vertical RRAMs in 1T–4R structure for high-density memory;Nature Communications;2023-09-23

4. Integration of HfO₂-based 3D OxRAM with GAA stacked-nanosheet transistor for high-density embedded memory;ESSDERC 2023 - IEEE 53rd European Solid-State Device Research Conference (ESSDERC);2023-09-11

5. Pragmatic OxRAM compact model ready to use for design studies;Solid-State Electronics;2023-06

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