Cold Source Engineering towards Sub-60mV/dec p-Type Field-effect-transistors (pFETs): Materials, Structures, and Doping Optimizations-Reference-Cited by-同舟云学术

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Cold Source Engineering towards Sub-60mV/dec p-Type Field-effect-transistors (pFETs): Materials, Structures, and Doping Optimizations

Published:2020-12-12 Issue: Volume: Page:
ISSN:
Container-title:2020 IEEE International Electron Devices Meeting (IEDM)
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Author:

Wang Qianwen,Sang Pengpeng,Ma Xiaolei,Wang Fei,Wei Wei,Zhang Weiqiang,Li Yuan,Chen Jiezhi

Funder

National Natural Science Foundation of China

Research and Development

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9371868/9371888/09371895.pdf?arnumber=9371895

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3. Phonon-assisted charge carriers thermalization in semiconductor Si and metallic silicide NiSi2, CoSi2: A non-adiabatic molecular dynamics study;Journal of Applied Physics;2024-07-10

4. Suppressing Thermal Tail by Dirac States and High Density of States in Two-Dimensional Ag₂S toward Low-Power Electronics;ACS Materials Letters;2024-04-19

5. Bias-independent subthreshold swing in ballistic cold-source field-effect transistors by drain density-of-states engineering;Applied Physics Letters;2024-01-29

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