Copper may destroy chip-level reliability: handle with care-mechanism and conditions for copper migrated resistive short formation-Reference-Cited by-同舟云学术

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Copper may destroy chip-level reliability: handle with care-mechanism and conditions for copper migrated resistive short formation

Published:1999-01 Issue:1 Volume:20 Page:5-8
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Harsanyi G.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx4/55/15898/00737556.pdf?arnumber=737556

Cited by 25 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. On the Electrochemical Migration Mechanism of Gold in Electronics—Less Reliable Than Expected?;Materials;2021-09-12

2. Atmospheric corrosion behavior of copper under static magnetic field environment;Materials Letters;2020-05

3. In situ investigation of atmospheric corrosion behavior of copper under thin electrolyte layer and static magnetic field;Microelectronics Reliability;2020-05

4. Electrochemical migration of Ni and ENIG surface finish during Environmental test contaminated by NaCl;Journal of Materials Science: Materials in Electronics;2017-09-01

5. Electrochemical Migration Behavior of Copper-Clad Laminate and Electroless Nickel/Immersion Gold Printed Circuit Boards under Thin Electrolyte Layers;Materials;2017-02-08

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