Large-Signal Static Compact Circuit Model of SiGe Heterojunction Bipolar Phototransistors: Effect of the Distributed Nature of Currents-Reference-Cited by-同舟云学术

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Large-Signal Static Compact Circuit Model of SiGe Heterojunction Bipolar Phototransistors: Effect of the Distributed Nature of Currents

Published:2018-03 Issue:3 Volume:65 Page:1029-1035
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Bennour Alae^ORCID,Tegegne Z. G.^ORCID,Mazer S.,Polleux J. L.,El Bekkali M.,Algani C.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/8299498/08249763.pdf?arnumber=8249763

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Optical Envelope Detector in Fiber Transmission and Correction Change Phase Using HPT;Digital Technologies and Applications;2023

2. Gamma-Induced Degradation Effect of InP HBTs Studied by Keysight Model;Nuclear Science and Engineering;2020-08-27

3. Electrical Compact Modeling of SiGe Phototransistor: Impact of the Distributed Nature on Dynamic Behavior;IEEE Transactions on Electron Devices;2020-03

4. Effect of Active Layer Scaling on the Performance of Ge1–x Sn x Phototransistors;IEEE Transactions on Electron Devices;2019-09

5. SiGe Photo-Transistor for Low-Cost SSMF-Based Radio-Over-Fiber Applications at 850nm;IEEE Journal of Quantum Electronics;2019-08

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