Reliability Analysis of LPCVD SiN Gate Dielectric for AlGaN/GaN MIS-HEMTs
Author:
Affiliation:
1. Robert Bosch GmbH, Renningen, Germany
2. Fraunhofer Institute of Applied Solid State Physics, Freiburg, Germany
Funder
ENIAC JU through the E2CoGaN Project
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/16/7906638/07893742.pdf?arnumber=7893742
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