Gate-Induced Drain Leakage Reduction in Cylindrical Dual-Metal Hetero-Dielectric Gate All Around MOSFET-Reference-Cited by-同舟云学术

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Gate-Induced Drain Leakage Reduction in Cylindrical Dual-Metal Hetero-Dielectric Gate All Around MOSFET

Published:2017 Issue: Volume: Page:1-8
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Rewari Sonam^ORCID,Nath Vandana,Haldar Subhasis,Deswal S. S.,Gupta R. S.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/4358746/08141955.pdf?arnumber=8141955

Cited by 35 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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2. Threshold voltage modeling based comparative performance exploration of Junctionless and Junction-Based High-K gate stack Dual-Material Cylindrical Gate-All-Around Macaroni MOSFET;Materials Science and Engineering: B;2024-05

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4. Exploration and Analysis of Temperature and Performance of Compound Semiconductor-Based Junctionless GAA FET;IEEE Access;2024

5. Hetero-dielectric macaroni channel cylindrical gate all around field effect transistor (HD-MC CGAA FET) for reduced gate leakage analog applications;Microsystem Technologies;2023-12-23

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