Benchmarking of Homojunction Strained-Si NW Tunnel FETs for Basic Analog Functions
Author:
Funder
E2SWITCH FP7 project
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/16/7885155/07867049.pdf?arnumber=7867049
Cited by 11 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Epitaxial Layer‐Based Si/SiGe Hetero‐Junction Line Tunnel FETs;Advanced Ultra Low‐Power Semiconductor Devices;2023-10-27
2. Design of Negative Capacitance based Dopantfree Junctionless Nanowire Tunnel FET for Analog and Linearity Analysis;2023 8th International Conference on Communication and Electronics Systems (ICCES);2023-06-01
3. Effect of Step Gate Work Function on InGaAs p-TFET for Low Power Switching Applications;Nanomaterials;2021-11-23
4. Implementation of ∑Δ ADC using electrically doped III‐V ternary alloy semiconductor nano‐wire TFET;Micro & Nano Letters;2020-04
5. TCAD Simulation of the Doping-Less TFET with Ge/SiGe/Si Hetero-Junction and Hetero-Gate Dielectric for the Enhancement of Device Performance;Coatings;2020-03-17
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