V2O5/4H-SiC Schottky Diode Temperature Sensor: Experiments and Model-Reference-Cited by-同舟云学术

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V2O5/4H-SiC Schottky Diode Temperature Sensor: Experiments and Model

Published:2018-02 Issue:2 Volume:65 Page:687-694
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Di Benedetto Luigi^ORCID,Licciardo Gian Domenico^ORCID,Rao S.^ORCID,Pangallo G.^ORCID,Della Corte F. G.^ORCID,Rubino Alfredo

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/8263417/08252730.pdf?arnumber=8252730

Cited by 16 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A 4H-SiC CMOS Oscillator-Based Temperature Sensor Operating from 298 K up to 573 K;Sensors;2023-12-06

2. Design of High-Performance Temperature Sensor Based on Planar 4H-SiC Junction Barrier Schottky Diode;2023 20th China International Forum on Solid State Lighting & 2023 9th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS);2023-11-27

3. Integrated Lateral SBD Temperature Sensor of a 4H-SiC VDMOS for Real-Time Temperature Monitoring;IEEE Transactions on Electron Devices;2023-07

4. Schottky diode on Silicon Carbide (SiC): ideal detector for very wide temperature range sensors;Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies XI;2023-03-02

5. Thermal sensitivity and barrier height inhomogeneity in thermally annealed and un-annealed Ni/n-6H-SiC Schottky diodes;Sensors and Actuators A: Physical;2022-05

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