Identification of Energy and Spatial Location of Electron Traps in AlGaN/GaN HFET Structures
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/16/7885155/07857677.pdf?arnumber=7857677
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. A Simple Method to Extract the Thermal Resistance of GaN HEMTs From De-Trapping Characteristics;IEEE Electron Device Letters;2023-06
2. Influence of intrinsic or extrinsic doping on lattice locations of carbon in semi-insulating GaN;Applied Physics Express;2019-05-14
3. Trapping Effects Induced by Gate OFF-State Stress in AlGaN/GaN High-Electron-Mobility Transistors with Fe-Doped Buffer;Journal of Nanoscience and Nanotechnology;2018-11-01
4. Exponential dependence of capture cross section on activation energy for interface traps in Al2O3/AlN/AlGaN/GaN metal-insulator-semiconductor heterostructures;Applied Physics Letters;2017-10-16
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