High breakdown characteristic δ-doped InGaP/InGaAs/AlGaAs tunneling real-space transfer HEMT-Reference-Cited by-同舟云学术

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High breakdown characteristic δ-doped InGaP/InGaAs/AlGaAs tunneling real-space transfer HEMT

Published:2002 Issue:2 Volume:49 Page:221-225
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Yen-Wei Chen ,Wei-Chou Hsu ,Her-Ming Shieh ,Yeong-Jia Chen ,Yu-Shyan Lin ,Yih-Juan Li ,Tzong-Bin Wang

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/21131/00981210.pdf?arnumber=981210

Cited by 16 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Donor ionization tuning in AlGaAs/InGaAs/GaAs PHEMT quantum wells with AlAs nanolayers in spacer;IOP Conference Series: Materials Science and Engineering;2019-04-16

2. Increase of the electron mobility in HEMT heterostructures with composite spacers containing AlAs nanolayers;Semiconductors;2014-12

3. Scattering and electron mobility in combination-doped HFET-structures AlGaAs/InGaAs/AlGaAs with high electron density;Semiconductors;2011-10

4. Observation of N-Shaped Negative Differential Resistance in GaAs-Based Modulation-Doped Field Effect Transistor with InAs Quantum Dots;Japanese Journal of Applied Physics;2010-10-20

5. Design, fabrication and characterization of dual-channel real space transfer transistor;Frontiers of Electrical and Electronic Engineering in China;2009-03-26

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