Development of 7th generation 3D VNAND Flash Product with COP structure for Growing Demand in Storage Market-Reference-Cited by-同舟云学术

Development of 7th generation 3D VNAND Flash Product with COP structure for Growing Demand in Storage Market

Published:2022-02-06 Issue: Volume: Page:
ISSN:
Container-title:2022 International Conference on Electronics, Information, and Communication (ICEIC)
language:
Short-container-title:

Author:

Lim Joonsung¹,Chung Soochan¹,Ko Dong-Hyeon¹,Sung Suk-Kang¹,Noh Kyungyoon¹,Ahn Su Jin¹,Song Jai Hyuk¹

Affiliation:

1. Samsung Electronics Co.,Department of Flash Product and Technology,Pyeongtaek,Gyeonggi,Korea,17786

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9748174/9748152/09748730.pdf?arnumber=9748730

Reference6 articles.

1. A new ruler on the storage market: 3D-NAND flash for high-density memory and its technology evolutions and challenges on the future

2. Vertical cell array using TCAT (Terabit Cell Array Transistor) technology for ultra high density NAND flash memory;jang;Symposium on VLSI Technology 2009,0

3. A 512Gb 3b/Cell 7th-Generation 3D-NAND Flash Memory with 184MB/s Write Throughput and 2.0 Gb/s Interface;cho;2021 IEEE International Solid-State Circuits Conference-(ISSCC),0

4. Highly-Reliable Cell Characteristics with 128-Layer Single-Stack 3D-NAND Flash Memory;park;Proc IEEE Symp VLSI Technol,0

5. Highly manufacturable 7th generation 3D NAND flash memory with COP structure and double stack process;kim;Proc IEEE Symp VLSI Technol,0

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Ternary-State Vertical NAND Flash Memory for the Improvement of the Density and Accuracy of Quantized Neural Networks;IEEE Transactions on Electron Devices;2024-06

2. Achievement of Green and Sustainable CVD Through Process, Equipment and Systematic Optimization in Semiconductor Fabrication;International Journal of Precision Engineering and Manufacturing-Green Technology;2024-04-05

3. SCR-LIBM: A Correctly Rounded Elementary Function Library in Double-Precision;International Journal of Software Engineering and Knowledge Engineering;2023-12-07

4. Laterally gated ferroelectric field effect transistor (LG-FeFET) using α-In2Se3 for stacked in-memory computing array;Nature Communications;2023-10-25

5. Recent Progress in Strain-Engineered Stretchable Constructs;International Journal of Precision Engineering and Manufacturing-Green Technology;2023-09-26