Comparative Analysis of ANN Architectures for the Development of GaN HEMT Small-Signal Model-Reference-Cited by-同舟云学术

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Comparative Analysis of ANN Architectures for the Development of GaN HEMT Small-Signal Model

Published:2021-12-17 Issue: Volume: Page:
ISSN:
Container-title:2021 IEEE MTT-S International Microwave and RF Conference (IMARC)
language:
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Author:

Husain S.¹,Hashmi M.²,Jarndal A.³,Chaudhary M.⁴,Nauryzbayev G.¹

Affiliation:

1. Nazarbayev University,School of Engineering and Digital Sciences,Nur-Sultan,Kazakhstan,010000

2. IIIT Delhi,Department of Electronics and Communication Engineering,New Delhi,India,110020

3. University of Sharjah,Department of Electrical Engineering,Sharjah,UAE

4. Ajman University,School of Engineering and IT,Ajman,UAE

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9714514/9714521/09714637.pdf?arnumber=9714637

Reference13 articles.

1. A new and Reliable Decision Tree Based Small-Signal Behavioral Modeling of GaN HEMT

2. Demonstration of CAD Deployability for GPR Based Small-Signal Modelling of GaN HEMT

3. On temperature‐dependent small‐signal modelling of GaN HEMTs using artificial neural networks and support vector regression

4. Broadband High-Power W-Band Amplifier MMICs Based on Stacked-HEMT Unit Cells

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Evaluating Nine Machine Learning Algorithms for GaN HEMT Small Signal Behavioral Modeling through K-fold Cross-Validation;Engineering, Technology & Applied Science Research;2024-08-02

2. Small-Signal Modeling of GaN-on-Diamond HEMT Using ANFIS Method;2023 International Symposium on Networks, Computers and Communications (ISNCC);2023-10-23

3. A Comprehensive Overview of the Temperature-Dependent Modeling of the High-Power GaN HEMT Technology Using mm-Wave Scattering Parameter Measurements;Electronics;2023-04-08

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