Normally-Off GaN HFET Based on Layout and Stress Engineering-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Normally-Off GaN HFET Based on Layout and Stress Engineering

Published:2016-12 Issue:12 Volume:37 Page:1621-1624
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Wong Hiu Yung^ORCID,Braga Nelson,Mickevicius R. V.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/7739309/07604071.pdf?arnumber=7604071

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Process-induced stress tuning to improve linearity performance in AlGaN/GaN HEMTs with SiNx passivation;Physica Scripta;2024-09-06

2. Rapid Inverse Design of GaN-on-GaN Diode with Guard Ring Termination for BV and (V_FQ)⁻¹ Co-Optimization;2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD);2023-05-28

3. Novel electromechanical coupling theory of GaN HEMT structure under mechanical clamping;Europhysics Letters;2023-02-01

4. Effect of Nitride Stress on Linearity performance of AlGaN/GaN HEMT;2022 IEEE International Conference of Electron Devices Society Kolkata Chapter (EDKCON);2022-11-26

5. A $\Pi$ -Shaped Gate Design for Reducing Hot-Electron Generation in GaN HEMTs;IEEE Transactions on Electron Devices;2018-10

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP