Comprehensive Analysis of Gate-Induced Drain Leakage in Vertically Stacked Nanowire FETs: Inversion-Mode Versus Junctionless Mode-Reference-Cited by-同舟云学术

Comprehensive Analysis of Gate-Induced Drain Leakage in Vertically Stacked Nanowire FETs: Inversion-Mode Versus Junctionless Mode

Published:2016-05 Issue:5 Volume:37 Page:541-544
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Hur Jae,Lee Byung-Hyun,Kang Min-Ho,Ahn Dae-Chul,Bang Tewook,Jeon Seung-Bae,Choi Yang-Kyu

Funder

Information Technology Research and Development Program of Ministry of Science, ICT and Future Planning/Institute for Information and Communications Technology Promotion

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/7458214/7430245.pdf?arnumber=7430245

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