Investigation of NH3 Plasma Nitridation on Hysteresis-Free Gate-All-Around Stacked Poly-Si Nanosheet Channel FeFETs

Author:

Hsieh Dong-Ru1,Lee Chia-Chin1,Hong Zi-Yang1,Chao Tien-Sheng1

Affiliation:

1. National Yang Ming Chiao Tung University,Department of Electrophysics,Hsinchu,Taiwan

Publisher

IEEE

Reference8 articles.

1. Sub-60mV-swing negative-capacitance FinFET without hysteresis;li;IEEE IEDM Tech Dig,2015

2. Review of negative capacitance transistors

3. High performance dual-gate sub-halfmicron CMOSFETs with 6 nm-thick nitride SiO2 films in an N2O ambient;uchiyama;IEEE IEDM Tech Dig,1990

4. Impact of Plasma Treatment on Reliability Performance for HfZrOx-Based Metal-Ferroelectric-Metal Capacitors

5. Suppression of boron penetration for p/sup +/ stacked poly-Si gates by using inductively coupled N2 plasma treatment

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