A Co-Design Approach to Understanding the Impact of Ultra-Wide-Bandgap Semiconductor Material Properties on Power Device Performance
Author:
Affiliation:
1. Sandia National Laboratories,Albuquerque,NM,USA,87185
2. Arizona State University,Tempe,AZ,USA,85287
3. Stanford University,Stanford,CA,USA,94305
Funder
U.S. Department of Energy
Office of Science
Basic Energy Sciences
National Nuclear Security Administration
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9797886/9797892/09798255.pdf?arnumber=9798255
Reference22 articles.
1. A numerical study of carrier impact ionization in AlxGa1−xN
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3. Demonstration and Analysis of Ultra-High Forward Current Density Diamond Diodes;surdi;IEEE Trans Elec Dev,2021
4. Transport and breakdown analysis for improved figure-of-merit for AlGaN power devices
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