First demonstration of flexible poly-Si nano-FETs (W/L<sub>g</sub>= 50/80 nm) on the polyimide utilizing multi-wavelength laser annealing assisted by laser-buffer layer-Reference-Cited by-同舟云学术

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First demonstration of flexible poly-Si nano-FETs (W/L_g= 50/80 nm) on the polyimide utilizing multi-wavelength laser annealing assisted by laser-buffer layer

Published:2022-03-06 Issue: Volume: Page:
ISSN:
Container-title:2022 6th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)
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Author:

Hou Po-Cheng¹,Huang Wen-Hsien²,Kao Ming-Hsuan²,Chen Shih-Wei²,Wang Hsing-Hsiang²,Shen Chang-Hong²,Shieh Jia-Min²,Pan Fu-Ming¹,Chang Li¹

Affiliation:

1. National Yang Ming Chiao Tung University,Department of Materials Science and Engineering,Hsinchu,Taiwan

2. Taiwan Semiconductor Research Institute (TSRI),Hsinchu,Taiwan

Funder

Ministry of Science and Technology

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9797886/9797892/09797921.pdf?arnumber=9797921

Reference6 articles.

1. A sandwiched buffer layer enabling pulsed ultraviolet- and visible-laser annealings for direct fabricating poly-Si field-effect transistors on the polyimide

2. Charge-trap non-volatile memories fabricated by laser-enabled low-thermal budget processes

3. Theoretical considerations regarding pulsed CO2 laser annealing of silicon

4. Substrate heating effects in CO2laser annealing of ion‐implanted silicon

5. Ion/Ioff ratio enhancement and scalability of gate-all-around nanowire negative-capacitance FET with ferroelectric HfO2

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