Ultrathin-barrier AlGaN/GaN heterostructure: An AlGaN-recess-free technology for fabrication of lateral GaN-based power devices
Author:
Affiliation:
1. Institute of Microelectronics of Chinese Academy of Sciences,Beijing,China
Funder
National Natural Science Foundation of China
Chinese Academy of Sciences
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9797886/9797892/09797960.pdf?arnumber=9797960
Reference21 articles.
1. 600-V Normally Off SiNx/AlGaN/GaN MIS-HEMT With Large Gate Swing and Low Current Collapse;tang;IEEE Electron Device Lett,2013
2. Gate Injection Transistor (GIT)—A Normally-Off AlGaN/GaN Power Transistor Using Conductivity Modulation
3. Selective Area Growth: A Promising Way for Recessed Gate GaN MOSFET With High Quality MOS Interface
4. High Uniformity Normally-OFF GaN MIS-HEMTs Fabricated on Ultra-Thin-Barrier AlGaN/GaN Heterostructure
5. Ultrathin-Barrier AlGaN/GaN Heterostructure: A Recess-Free Technology for Manufacturing High-Performance GaN-on-Si Power Devices
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1. Recess-free enhancement-mode AlGaN/GaN RF HEMTs on Si substrate;Journal of Semiconductors;2024-06-01
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