Modified Shockley Equation for GaInN-Based Light-Emitting Diodes: Origin of the Power- Efficiency Degradation Under High Current Injection-Reference-Cited by-同舟云学术

Modified Shockley Equation for GaInN-Based Light-Emitting Diodes: Origin of the Power- Efficiency Degradation Under High Current Injection

Published:2019-08 Issue:4 Volume:55 Page:1-11
ISSN:0018-9197
Container-title:IEEE Journal of Quantum Electronics
language:
Short-container-title:IEEE J. Quantum Electron.

Author:

Han Dong-Pyo^ORCID,Shin Dong-Soo^ORCID,Shim Jong-In^ORCID,Kamiyama Satoshi,Takeuchi Tetsuya,Iwaya Motoaki,Akasaki Isamu

Funder

MEXT Private University Research Branding Project, MEXT Program for Research and Development of Next-Generation Semiconductor to realize energy-saving society

JSPS KAKENHI for Scientific Research A

JSPS KAKENHI for Innovative Areas

Japan Science and Technology CREST

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Atomic and Molecular Physics, and Optics

Link

http://xplorestaging.ieee.org/ielx7/3/8725812/08717993.pdf?arnumber=8717993

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