CMOS Charge Pump With No Reversion Loss and Enhanced Drivability-Reference-Cited by-同舟云学术

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CMOS Charge Pump With No Reversion Loss and Enhanced Drivability

Published:2014-06 Issue:6 Volume:22 Page:1441-1445
ISSN:1063-8210
Container-title:IEEE Transactions on Very Large Scale Integration (VLSI) Systems
language:
Short-container-title:IEEE Trans. VLSI Syst.

Author:

Kim Joung-Yeal,Park Su-Jin,Kwon Kee-Won,Kong Bai-Sun,Choi Joo-Sun,Jun Young-Hyun

Funder

Samsung Electronics and IDEC, KAIST

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Hardware and Architecture,Software

Link

http://xplorestaging.ieee.org/ielx7/92/6819107/06553217.pdf?arnumber=6553217

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Extended Power Dynamic Range and Enhanced Power Conversion Efficiency of a Switched-Capacitor DC-DC Converter: A Tutorial;IEEE Transactions on Circuits and Systems II: Express Briefs;2023

2. Analysis and Design of High-Efficiency Charge Pumps With Improved Current Driving Capability Using Gate Voltage Boosting Technique;IEEE Transactions on Circuits and Systems I: Regular Papers;2022-06

3. Low Voltage Switched-Capacitive-Based Reconfigurable Charge Pumps for Energy Harvesting Systems: An Overview;IEEE Access;2022

4. A 5 V to 180 V Charge Pump for Capacitive Loads in a 180 nm SOI Process;Elektronika ir Elektrotechnika;2021-12-14

5. Low-Voltage Capacitive-Based Step-Up DC-DC Converters for RF Energy Harvesting System: A Review;IEEE Access;2020

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