Analysis and Design of High-Efficiency Charge Pumps With Improved Current Driving Capability Using Gate Voltage Boosting Technique-Reference-Cited by-同舟云学术

Analysis and Design of High-Efficiency Charge Pumps With Improved Current Driving Capability Using Gate Voltage Boosting Technique

Published:2022-06 Issue:6 Volume:69 Page:2364-2375
ISSN:1549-8328
Container-title:IEEE Transactions on Circuits and Systems I: Regular Papers
language:
Short-container-title:IEEE Trans. Circuits Syst. I

Author:

Zhou Yixin¹^ORCID,Ma Shiyue²^ORCID,Wang Zhi-Gong³^ORCID,Zhang Hao⁴,Wang Keping⁵^ORCID

Affiliation:

1. EAST Laboratory, School of Information Science and Engineering, Southeast University, Nanjing, China

2. School of Microelectronics, Tianjin University, Tianjin, China

3. Institute of RF- & OE-ICs, Southeast University, Nanjing, China

4. Nanjing Research Institute of Electronics Technology, Nanjing, China

5. School of Information Science and Engineering, EAST Laboratory, Southeast University, Nanjing, China

Funder

National Natural Science Funds of China

Natural Science Foundation of Jiangsu Province

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Hardware and Architecture

Link

http://xplorestaging.ieee.org/ielx7/8919/9782465/09734791.pdf?arnumber=9734791

Reference33 articles.

1. An HV-CMOS Integrated Circuit for Neural Stimulation in Prosthetic Applications

2. A 232-Channel Epiretinal Stimulator ASIC

3. A 0.2 V-to-5 V fully-integrated reconfigurable buck/boost switched-capacitor voltage regulator for self-powered wireless sensors;wei;Proc 32nd Conf Design Circuits Integr Syst (DCIS),2017

4. Charge sharing concept and new clocking scheme for power efficiency and electromagnetic emission improvement of boosted charge pumps

5. CMOS Charge Pump With No Reversion Loss and Enhanced Drivability

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A Current-Efficient Pseudo-3D Regulated Dickson Charge Pump;IEEE Transactions on Power Electronics;2024-08

2. A Fully Integrated Stimulator With High Stimulation Voltage Compliance Using Dynamic Bulk Biasing Technique in a Bulk CMOS Technology;IEEE Transactions on Circuits and Systems I: Regular Papers;2024-06

3. A 20-V Pulse Driver Based on All-nMOS Charge Pump Without Reversion Loss and Overstress in 65-nm Standard CMOS Technology;IEEE Transactions on Very Large Scale Integration (VLSI) Systems;2024

4. A Wide Input Range All-NMOS Rectifier With Gate Voltage Boosting Technique for Wireless Power Transfer;IEEE Transactions on Circuits and Systems II: Express Briefs;2023-11

5. A Fully Integrated High-Efficiency All-NMOS Charge Pump for Wide Input Range Ultra-Low Dropout Regulator;2023 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA);2023-10-27