Analysis and On-Chip Monitoring of Gate Oxide Breakdown in SRAM Cells-Reference-Cited by-同舟云学术

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Analysis and On-Chip Monitoring of Gate Oxide Breakdown in SRAM Cells

Published:2012-05 Issue:5 Volume:20 Page:855-864
ISSN:1063-8210
Container-title:IEEE Transactions on Very Large Scale Integration (VLSI) Systems
language:
Short-container-title:IEEE Trans. VLSI Syst.

Author:

Ahmed Fahad,Milor Linda

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Hardware and Architecture,Software

Link

http://xplorestaging.ieee.org/ielx5/92/6178142/05740979.pdf?arnumber=5740979

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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3. Built-In Self-Test Methodology With Statistical Analysis for Electrical Diagnosis of Wearout in a Static Random Access Memory Array;IEEE Transactions on Very Large Scale Integration (VLSI) Systems;2016-07

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