RF de-embedding technique for extracting power MOSFET package parasitics-Reference-Cited by-同舟云学术

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RF de-embedding technique for extracting power MOSFET package parasitics

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Container-title:IWIPP 2000. International Workshop on Integrated Power Packaging (Cat. No.00EX426)
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Author:

McShane E.,Shenai K.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/7104/19137/00885182.pdf?arnumber=885182

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A New Data Fitting Method for Parasitic Impedances of Power Transistor Packages using Two-Port S-Parameter Measurements;2022 IEEE 7th Southern Power Electronics Conference (SPEC);2022-12-05

2. A Measurement-Based Method for Characterizing Parasitic Inductances in Power Electronic Circuits;2021 23rd European Conference on Power Electronics and Applications (EPE'21 ECCE Europe);2021-09-06

3. Parasitic Inductances Extraction for SiC Power Modules Using An Enhanced Two-Port S-Parameter Approach;2021 IEEE Applied Power Electronics Conference and Exposition (APEC);2021-06-14

4. A Simplified Method for Extracting Parasitic Inductances of MOSFET-Based Half-Bridge Circuit;IEEE Access;2021

5. An RF Approach to Modelling Gallium Nitride Power Devices Using Parasitic Extraction;Electronics;2020-11-26

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