A New Data Fitting Method for Parasitic Impedances of Power Transistor Packages using Two-Port S-Parameter Measurements-Reference-Cited by-同舟云学术

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A New Data Fitting Method for Parasitic Impedances of Power Transistor Packages using Two-Port S-Parameter Measurements

Published:2022-12-05 Issue: Volume: Page:
ISSN:
Container-title:2022 IEEE 7th Southern Power Electronics Conference (SPEC)
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Author:

Moldaschl Thomas¹,Woetzel Stefan²,Galvano Maurizio³,Mayer Christoph⁴,Hackl Herbert⁵,Binder Alfred⁶

Affiliation:

1. Sensor Applications SAL Silicon Austria Labs GmbH,Villach,Austria

2. IFAG BE DEV I C Infineon Technologies AG,Regensburg,Germany

3. IFI DC ATV BP SMP Infineon Technologies AG,Padova,Italy

4. R&D Services - Electronics SAL Silicon Austria Labs GmbH,Villach,Austria

5. Coexistence & Electromagnetic Compatibility SAL Silicon Austria Labs GmbH,Graz,Austria

6. HIT Heterogenous Integration Technologies SAL Silicon Austria Labs GmbH,Villach,Austria

Funder

ECSEL Joint Undertaking (JU)

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10058186/10058061/10058290.pdf?arnumber=10058290

Reference10 articles.

1. On the least-squares method

2. Automatic Bayesian curve fitting

3. Fast and simple model generation for superjunction power MOSFETs

4. Package Parasitic Inductance Extraction and Simulation Model Development for the High-Voltage Cascode GaN HEMT

5. Parasitic inductance effect on switching losses for a high frequency Dc-Dc converter

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