Characterization of Reliabilities of 22 nm UTBB FDSOI Ring Oscillators
Author:
Affiliation:
1. Fudan University,State Key Laboratory of ASIC and System,Shanghai,China
2. Fudan Microelectronics Co., Ltd.,Shanghai,China
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9962815/9963138/09963255.pdf?arnumber=9963255
Reference6 articles.
1. Influence of Body-Biasing, Supply Voltage, and Temperature on the Detection of Resistive Short Defects in FDSOI Technology
2. Single Event Transient and TID Study in 28 nm UTBB FDSOI Technology
3. Resistive bridge defect detection enhancement under parameter variations combining Low VDD and body bias in a delay based test
4. Proc. Design;rossello;Proc Des Automat Test Europe (DATE),2007
5. Innovative Materials, Devices, and CMOS Technologies for Low-Power Mobile Multimedia
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