A 7T1R Nonvolatile SRAM with High Stability, Low Delay and Low Power Consumption Embedded with Transmission Gates (TGs)-Reference-Cited by-同舟云学术

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A 7T1R Nonvolatile SRAM with High Stability, Low Delay and Low Power Consumption Embedded with Transmission Gates (TGs)

Published:2022-10-25 Issue: Volume: Page:
ISSN:
Container-title:2022 IEEE 16th International Conference on Solid-State & Integrated Circuit Technology (ICSICT)
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Author:

Zhu Yangyang¹,Xia Yingjian¹,Cheng Shenghua¹,Sun Yue¹,Wang Xiaohu¹

Affiliation:

1. Dalian University of Technology,School of Mechanical Engineering,Liaoning Dalian,China,116024

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9962815/9963138/09963337.pdf?arnumber=9963337

Reference8 articles.

1. Low Store Energy, Low VDDmin, 8T2R Nonvolatile Latch and SRAM With Vertical-Stacked Resistive Memory (Memristor) Devices for Low Power Mobile Applications

2. Design of a Nonvolatile 7T1R SRAM Cell for Instant-on Operation

3. Design of Hybrid CMOS Non-Volatile SRAM Cells in 130nm RRAM Technology

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Store and Restore Delay Reduction Techniques of Non-volatile SRAM cells;2023 International Conference on Sustainable Computing and Smart Systems (ICSCSS);2023-06-14

2. Process invariant Schmitt Trigger non-volatile 13T1M SRAM cell;Microelectronics Journal;2023-05

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