Impact of NH/sub 3/ pre-treatment on the electrical and reliability characteristics of ultra thin hafnium silicate films prepared by re-oxidation method-Reference-Cited by-同舟云学术

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Impact of NH/sub 3/ pre-treatment on the electrical and reliability characteristics of ultra thin hafnium silicate films prepared by re-oxidation method

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Container-title:60th DRC. Conference Digest Device Research Conference
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Author:

Gopalan S.,Choi R.,Onishi K.,Nieh R.,Kang C.S.,Cho H.-J.,Krishnan S.,Lee J.C.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/7995/22114/01029598.pdf?arnumber=1029598

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Cycling-Induced Peak-Like Interface State Generation in Si-Nanocrystal Memory Devices;IEEE Electron Device Letters;2012-12

2. Effect of NH3 surface nitridation temperature on mobility of ultrathin atomic layer deposited HfO2;Applied Physics Letters;2005-01-17

3. Optimized NH<tex>$_3$</tex>Annealing Process for High-Quality HfSiON Gate Oxide;IEEE Electron Device Letters;2004-07

4. High-performance TaN/HfSiON/Si metal-oxide-semiconductor structures prepared by NH3 post-deposition anneal;Applied Physics Letters;2003-03-17

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