Microwave Characteristics of an Optically Controlled GaAs MESFET-Reference-Cited by-同舟云学术

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Microwave Characteristics of an Optically Controlled GaAs MESFET

Published:1983 Issue:7 Volume:31 Page:596-600
ISSN:0018-9480
Container-title:IEEE Transactions on Microwave Theory and Techniques
language:
Short-container-title:IEEE Trans. Microwave Theory Techn.

Author:

Mizuno H.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Radiation

Link

http://xplorestaging.ieee.org/ielx6/22/25118/01131551.pdf?arnumber=1131551

Cited by 55 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Structural optimization and analysis of GaAs buried-gate OPFET for visible-light communication;Optical and Quantum Electronics;2020-11-17

2. Optical response and sensitivity of an ion-implanted MESFET under electron velocity saturation;Optical Engineering;2019-11-14

3. Dual-Application-Mode Buried-Gate GaN OPFET for Ultraviolet Communication;2019 Innovations in Power and Advanced Computing Technologies (i-PACT);2019-03

4. Material, Structural Optimization and Analysis of Visible-Range Back-Illuminated OPFET photodetector;Advances in Science, Technology and Engineering Systems Journal;2019

5. Optically Controlled Silicon MESFET Fabrication and Characterizations for Optical Modulator/Demodulator;JSTS:Journal of Semiconductor Technology and Science;2010-09-30

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