Material, Structural Optimization and Analysis of Visible-Range Back-Illuminated OPFET photodetector
Author:
Publisher
ASTES Journal
Subject
Management of Technology and Innovation,Physics and Astronomy (miscellaneous),Engineering (miscellaneous)
Link
https://www.astesj.com/publications/ASTESJ_040459.pdf
Reference19 articles.
1. J. V. Gaitonde, and R. B. Lohani, "Back-illuminated GaAs OPFET: A High Visible/UV Contrast Photodetector," In 2018 Conference on Emerging Devices and Smart Systems (ICEDSS), IEEE, Namakkal, Tamil Nadu, India, 2018.https://doi.org/10.1109/ICEDSS.2018.8544284
2. L. U. Khan, "Visible light communication: Applications, architecture, standardization and research challenges," Digital Communications and Networks 3(2), 78-88, 2017. https://doi.org/10.1016/j.dcan.2016.07.004
3. C. Baack, G. Elze, and G. Walf, "GaAs MESFET: A high-speed optical detector," Electronics Letters, 13(7), 193-193, 1977.https://doi.org/10.1049/el:19770141
4. A. A. A. De Salles, "Optical control of GaAs MESFET's," IEEE Trans. on Microwave Theory and Techniques, 31(10), 812-820, 1983.https://doi.org/10.1109/TMTT.1983.1131611
5. H. Mizuno, "Microwave characteristics of an optically controlled GaAs MESFET," IEEE Trans.on Microwave Theory and Techniques, 31(7), 596-600, 1983.https://doi.org/10.1109/TMTT.1983.1131551
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