Self-Consistent GaAs FET Models for Amplifier Design and Device Diagnostics

Author:

Curtice W.R.,Camisa R.L.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Radiation

Cited by 64 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Equivalent‐circuit extraction for gallium nitride electron devices: Direct versus optimization‐empowered approaches;International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;2022-04-03

2. Performance Comparative Analysis of MESFET with Si, GaAs, SiC and GaN Substrate Effects;2021 Photonics & Electromagnetics Research Symposium (PIERS);2021-11-21

3. Comparative analysis of parameter extraction techniques for AlGaN/GaN HEMT on silicon/sapphire substrate;Microelectronics Reliability;2017-11

4. The large world of FET small-signal equivalent circuits (invited paper);International Journal of RF and Microwave Computer-Aided Engineering;2016-08-17

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