Condition Deterioration Mechanisms of High Voltage Press-Pack IGBT under Power Cycling Test-Reference-Cited by-同舟云学术

Condition Deterioration Mechanisms of High Voltage Press-Pack IGBT under Power Cycling Test

Published:2022-09-25 Issue: Volume: Page:
ISSN:
Container-title:2022 IEEE International Conference on High Voltage Engineering and Applications (ICHVE)
language:
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Author:

Zhang Yaxin¹,Zhan Cao¹,Zhu Lingyu¹,Dou Libo²,Wang Weicheng¹,Ji Shengchang¹,Jin Yuan³,Liu Xiulan³

Affiliation:

1. Xi'an Jiaotong University,Xi'an,Shaanxi Province,China

2. University of Nebraska-Lincoln,Lincoln,US

3. State Grid Beijing Electric Power Company

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9961325/9961221/09961806.pdf?arnumber=9961806

Reference16 articles.

1. Power Cycling Test Methods for Reliability Assessment of Power Device Modules in Respect to Temperature Stress;choi;IEEE Transactions on Industrial Electronics,2018

2. Analysis on the difference of the characteristic between high power IGBT modules and press pack IGBTs

3. Possible failure modes in Press-Pack IGBTs

4. Aging Test and Failure Mechanism Study of Single-chip Press-pack IGBT;jiang;Power Electronics,2018

5. Wear-out Mechanism of Press-pack IGBTs Under Accelerated Aging Test

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1. Power Cycling and Research on Failure Mechanism of Press-Pack IGBT based on Thermal Resistance Composition Testing;2024 4th International Conference on Electronic Materials and Information Engineering (EMIE);2024-06-12

2. Partial discharge characteristics of peek utilized in press-pack IGBT under DC voltage;Electrical Engineering;2024-05-27