Balancing of Peak Currents Between Paralleled SiC MOSFETs by Drive-Source Resistors and Coupled Power-Source Inductors-Reference-Cited by-同舟云学术

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Balancing of Peak Currents Between Paralleled SiC MOSFETs by Drive-Source Resistors and Coupled Power-Source Inductors

Published:2017-10 Issue:10 Volume:64 Page:8334-8343
ISSN:0278-0046
Container-title:IEEE Transactions on Industrial Electronics
language:
Short-container-title:IEEE Trans. Ind. Electron.

Author:

Mao Yincan,Miao Zichen,Wang Chi-Ming,Ngo Khai D. T.

Funder

Toyota Motor Engineering & Manufacturing North America

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Control and Systems Engineering

Link

http://xplorestaging.ieee.org/ielx7/41/8031005/07951006.pdf?arnumber=7951006

Cited by 70 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A Dynamic Current Balancing Method for Paralleled SiC MOSFETs With Gate-Branch Full-Coupled Inductors;IEEE Transactions on Power Electronics;2024-10

2. An Active Gate Driver Control Scheme for Steady-State Current Balancing of Paralleled SiC MOSFETs;IEEE Transactions on Circuits and Systems II: Express Briefs;2024-09

3. A Dynamic Current Sharing Model of Multichip Parallel SiC MOSFETs Considering Layout-Dominated Mutual Inductance Coupling;IEEE Transactions on Power Electronics;2024-09

4. A Hybrid Current Balancing Method for Multiple Paralleled SiC-MOSFET Half-Bridge Modules;IEEE Transactions on Power Electronics;2024-06

5. Dynamic Current Sharing Mechanism Analysis of Paralleled SiC MOSFETs Considering Parasitic Mutual Inductances Based on an Improved Model;IEEE Transactions on Power Electronics;2024-06

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