Performance analysis of GaN/Si versus GaAs LNAs in 5G mm-wave frontend context

Author:

Letailleur L.1,Villegas M.1,Hajjar A.Al2,Kacou C.Edoua2

Affiliation:

1. Univ.Gustave Eiffel,CNRS,ESYCOM,Marne la Vallée,France,F-77454

2. OMMIC SAS,Limeil-Brevannes,France,FR-94450

Publisher

IEEE

Reference5 articles.

1. 5G Fixed Wireless Access Array and RF Front-End Trade-Offs;peterson;Microwave Journal,2018

2. Millimeter-Wave GaN Devices for 5G: Massive MIMO Antenna Arrays for Sub-6-Ghz and mm-Wave Bandwidth

3. III-V processes;sas,2019

4. Bits to Beams: RF Technology Evolution for 5G Millimeter Wave Radios;cameron,2022

5. TS 38.104 V17.4.0, Base Station (BS) radio transmission and reception (Release 17),2021

Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. A 2-V 1.4-dB NF GaAs MMIC LNA for K-Band Applications;Sensors;2023-01-12

2. A 24-41 GHz GaN Low-Noise Amplifier with Cascode Structure and Multi-Stage Load;2022 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP);2022-11-27

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