A 24-41 GHz GaN Low-Noise Amplifier with Cascode Structure and Multi-Stage Load-Reference-Cited by-同舟云学术

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A 24-41 GHz GaN Low-Noise Amplifier with Cascode Structure and Multi-Stage Load

Published:2022-11-27 Issue: Volume: Page:
ISSN:
Container-title:2022 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)
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Author:

Chen Shuixi¹,Chen Zhijian¹,Li Bin¹,Jiang Huaxing¹

Affiliation:

1. South China University of Technology,School of Microelectronics,Guangzhou,Guangdong,China,511442

Funder

Research and Development

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10106786/10106791/10107340.pdf?arnumber=10107340

Reference7 articles.

1. 15–32 GHz Broad Band Low-Noise Amplifier using 100nm GaN on Silicon Technology

2. Performance analysis of GaN/Si versus GaAs LNAs in 5G mm-wave frontend context

3. A 10–110 GHz LNA with 19-25.5 dB Gain and 4.8-5.3 dB NF for Ultra-Wideband Applications in 90nm SiGe HBT Technology

4. Design and Validation of 100 nm GaN-On-Si Ka-Band LNA Based on Custom Noise and Small Signal Models

5. DC Power-Optimized Ka-Band GaN-on-Si Low-Noise Amplifier With 1.5 dB Noise Figure

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Design and Simulation of Low Noise Amplifier for Sub-6GHz 5G Application;2023 International Conference on Smart Systems for applications in Electrical Sciences (ICSSES);2023-07-07

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