Effect of thermal annealing in H2 atmosphere of SiCxOy films obtained by HFCVD technique-Reference-Cited by-同舟云学术

Effect of thermal annealing in H₂ atmosphere of SiC_xO_y films obtained by HFCVD technique

Published:2023-10-25 Issue: Volume: Page:
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Container-title:2023 20th International Conference on Electrical Engineering, Computing Science and Automatic Control (CCE)
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Author:

Trinidad Juan Carlos Pérez¹,Agustín Marco Antonio Vasquez²,Salgado Godofredo García¹,Trujillo Román Romano¹,Marcos Fernando López²,Vilchis Heber³,Andrés Enrique Rosendo¹,Arciniega José Juan Gervacio⁴,Martínez Orlando Cortazar⁵,Solís Antonio Coyopol¹

Affiliation:

1. Benemérita Universidad Autónoma de Puebla, Mexico,Semiconductor Devices Research Center,Puebla,Mexico

2. Benemérita Universidad Autónoma de Puebla, Mexico,Faculty of Electronic Science,Puebla,Mexico

3. Institute for Research and Innovation in Renewable Energies,Chiapas,Mexico

4. Benemérita Universidad Autónoma de Puebla, Mexico,Faculty of Mathematical-Physical Sciences,Puebla,Mexico

5. Cinvestav Unidad Queretaro,Queretaro,Mexico

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10332458/10332802/10332817.pdf?arnumber=10332817

Reference25 articles.

1. Hot electron engineering for boosting electroluminescence efficiencies of silicon-rich nitride light emitting devices

2. Higher than 60% internal quantum efficiency of photoluminescence from amorphous silicon oxynitride thin films at wavelength of 470 nm

3. Waveguide-detector system on silicon for sensor application

4. White light emission from silicon oxycarbide films prepared by using atmospheric pressure microplasma jet

5. Effect of thermal annealing on the blue luminescence of amorphous silicon oxycarbide films