Ultra-low-noise cryogenic high-electron-mobility transistors-Reference-Cited by-同舟云学术

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Ultra-low-noise cryogenic high-electron-mobility transistors

Published:1988-03 Issue:3 Volume:35 Page:249-256
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Duh K.H.G.,Pospieszalski M.W.,Kopp W.F.,Ho P.,Jabra A.A.,Chao P.-C.,Smith P.M.,Lester L.F.,Ballingall J.M.,Weinreb S.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx1/16/148/00002448.pdf?arnumber=2448

Cited by 54 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Signal Readout for Transition-Edge Sensor X-ray Imaging Spectrometers;Handbook of X-ray and Gamma-ray Astrophysics;2024

2. Noise Figure Measurement of 60 GHz Band Amplifiers at Cryogenic Temperatures;2023 XXXVth General Assembly and Scientific Symposium of the International Union of Radio Science (URSI GASS);2023-08-19

3. Signal Readout for Transition-Edge Sensor X-ray Imaging Spectrometers;Handbook of X-ray and Gamma-ray Astrophysics;2023

4. A cryogenic electro-optic interconnect for superconducting devices;Nature Electronics;2021-05

5. Silicon Germanium Cryogenic Low Noise Amplifiers;Journal of Physics: Conference Series;2017-05-02

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