Transient Thermal Performance of IGBT Power Modules Attached by Low-Temperature Sintered Nanosilver-Reference-Cited by-同舟云学术

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Transient Thermal Performance of IGBT Power Modules Attached by Low-Temperature Sintered Nanosilver

Published:2012-03 Issue:1 Volume:12 Page:124-132
ISSN:1530-4388
Container-title:IEEE Transactions on Device and Materials Reliability
language:
Short-container-title:IEEE Trans. Device Mater. Relib.

Author:

Chen Gang,Han Dan,Mei Yun-Hui,Cao Xiao,Wang Tao,Chen Xu,Lu Guo-Quan

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Safety, Risk, Reliability and Quality,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/7298/6163420/06060900.pdf?arnumber=6060900

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1. Exploring Influential Factors Affecting Baseplate Distortion and Residual Stress in Insulated-Gate Bipolar Transistor (IGBT) Modules During Reflow Soldering;Journal of Electronic Materials;2024-08-01

2. Thermal creep and fatigue failure of the sintered silver solder in a SiC-IGBT module under power cycling;Engineering Failure Analysis;2023-12

3. Effects of Porosity on Thermal Resistance Aging at Submicron Silver Interfaces;2023 24th International Conference on Electronic Packaging Technology (ICEPT);2023-08-08

4. Advanced Method of Pure Solder Layer Thermal Resistance Measurement in Power Cycling;2023 IEEE 6th International Electrical and Energy Conference (CIEEC);2023-05-12

5. A parameter self-correcting thermal network model considering IGBT module solder layer aging;Microelectronics Journal;2023-04

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