A Study of Cu/CuMn Barrier for 22-nm Semiconductor Manufacturing-Reference-Cited by-同舟云学术

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A Study of Cu/CuMn Barrier for 22-nm Semiconductor Manufacturing

Published:2014-03 Issue:1 Volume:14 Page:286-290
ISSN:1530-4388
Container-title:IEEE Transactions on Device and Materials Reliability
language:
Short-container-title:IEEE Trans. Device Mater. Relib.

Author:

Sze-Ann Wu ,Yi-Lung Cheng ,Chia-Yang Wu ,Wen-Hsi Lee

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Safety, Risk, Reliability and Quality,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/7298/6755472/06515175.pdf?arnumber=6515175

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Mechanism of strengthening electroless plated copper films with extremely dilute oxide dispersion alloying: The optimal MnO addition;Applied Surface Science;2020-10

2. Self-strengthening of electroless-plated copper via dual segregation of extremely dilute (0.1%) manganese oxide inclusions;Materials Letters;2019-12

3. Characterization of Cu–Mn/Ta Layer as Cu Diffusion Barrier on a Low-k Dielectric;Journal of Nanoscience and Nanotechnology;2016-10-01

4. Barrier Property of a Ta/MnSixOyLayer Formed by a Ta–Mn Alloy for a Cu Interconnect;IEEE Electron Device Letters;2016-08

5. Kinetics of Adsorption of Methylcyclopentadienyl Manganese Tricarbonyl on Copper Surfaces and Implications for the Atomic Layer Deposition of Thin Solid Films;The Journal of Physical Chemistry C;2016-04-07

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