Self-strengthening of electroless-plated copper via dual segregation of extremely dilute (0.1%) manganese oxide inclusions-Reference-Cited by-同舟云学术

Self-strengthening of electroless-plated copper via dual segregation of extremely dilute (0.1%) manganese oxide inclusions

Published:2019-12 Issue: Volume:257 Page:126711
ISSN:0167-577X
Container-title:Materials Letters
language:en
Short-container-title:Materials Letters

Author:

Chen Giin-Shan^ORCID,Tau Ren-Jie,Chen Sung-Te,Chen Yen-Chin,Cheng Yi-Lung,Fang Jau-Shiung

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference20 articles.

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2. The International Technology Roadmap for Semiconductors 2.0 (ITRS 2.0), 2015 edition; The International Roadmap for Devices and Systems (IRDS), 2017 edition.

3. A Study of Cu/CuMn Barrier for 22-nm Semiconductor Manufacturing

4. Characterisation of the barrier formation process of self-forming barriers with CuMn, CuTi and CuZr alloys

5. Investigation of the barrier properties of copper-vanadium alloys with a sub-tantalum layer on low-k dielectrics

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